Design concepts of single-layer resists for vacuum ultraviolet lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 7103-7108

  Kishimura, Shinji ^a   Katsuyama, Akiko ^a   Sasago, Masaru ^a   Shirai, Masamitsu ^b   Tsunooka, Masahiro ^b  

^a PANASONIC CORPORATION   (Japan)

^b Osaka Prefecture University   (Japan)

Author keywords

146 nm; 157 nm; F2 excimer laser; Kr2 excimer lamp; Methacrylate polymer; Photoresist; Poly (p hydroxystyrene); Transmittance; Vacuum ultraviolet; VUV lithography

Indexed keywords

CROSSLINKING; EXCIMER LASERS; HALOGENATION; LIGHT TRANSMISSION; PHOTOLYSIS; POLYSTYRENES; ULTRAVIOLET RADIATION; VACUUM APPLICATIONS;

POLYHYDROXYSTYRENE; SINGLE-LAYER RESISTS; VACUUM ULTRAVIOLET LITHOGRAPHY;

PHOTORESISTS;

EID: 0033308389     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.7103     Document Type: Article

References (4)

1. M. Sasago: J. Photopolym. Sci. Technol. 12 (1999) 585.
2. T. M. Bloomstein, M. W. Horn, M. Rothschild, R. R. Kunz, S. T. Palmacci and R. B. Goodman: J. Vac. Sci. Technol. B 15 (1997) 2112.
3. T. M. Bloomstein, M. Rothschild, R. R. Kunz, D. E. Hardy, R. B. Goodman and S. T. Palmacci: J. Vac. Sci. Technol. B 16 (1998) 3154.
4. J. F. Rabek: Mechanisms of Photophysical Process and Photochemical Reactions in Polymers (John Wiley & Sons, New York, 1987) p. 528.