Etching behavior of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 174-182

  Tserepi, A ^a   Cordoyiannis, G ^a   Patsis, G P ^a   Constantoudis, V ^a   Gogolides, E ^a   Valamontes, E S ^b   Eon, D ^c   Peignon, M C ^c   Cartry, G ^c   Cardinaud, Ch ^c   Turban, G ^c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b UNIVERSITY OF WEST ATTICA   (Greece)

^c INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL MODIFICATION; ELLIPSOMETRY; INTERFEROMETRY; LITHOGRAPHY; PHOTORESISTS; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

BILAYER LITHOGRAPHY; LINE EDGE ROUGHNESS; POLYDIMETHYL SILOXANE; SILICON CONTAINING POLYMERS;

ORGANIC POLYMERS;

EID: 0037207710     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1535929     Document Type: Article

References (28)

1. A. Cefalas, E. Sarantopoulou, E. Gogolides, and P. Argitis, Microelectron. Eng. 53, 123 (2000).
2. R. Kunz et al., J. Vac. Sci. Technol. B 17, 3267 (1999).
3. J. Paraszczak et al., Microelectron. Eng. 6, 453 (1987).
4. C. W. Jurgensen, A. Shugart, N. Nudash, E. Reihmanis, and M. J. Vasile, J. Vac. Sci. Technol. A 6, 2938 (1998).
5. A. P. Mahorowala, K. Babich, Q. Lin, D. R. Medeiros, K. Petrillo, J. Simons, M. Angelopoulos, R. Sooriyakumaran, D. Hofer, G. W. Reynolds, and J. W. Taylor, J. Vac. Sci. Technol. A 18, 1411 (2000).
6. S. Mori, T. Morisawa, N. Matsuzawa, Y. Kaimoto, M. Endo, T. Matsuo, K. Kuhara, and M. Sasago, J. Vac. Sci. Technol. B 16, 3739 (1998).
7. S. C. Palmateer, S. G. Cann, J. E. Curtin, S. P. Doran, L. M. Eriksen, A. R. Forte, R. R. Kunz, T. M. Lyszczarz, M. B. Stern, and C. Nelson, Proc. SPIE 3333, 634 (1998).
8. T. Sugihara, F. Van Roey, A. M. Goethals, K. Ronse, and L. Van den hove, Microelectron. Eng. 46, 339 (1999).
9. N. Matsuzawa, H. Oizumi, S. Mori, S. Irie, and E. Yano, Microelectron. Eng. 53, 671 (2000).
10. A. Tserepi, E. S. Valamontes, E. Tegou, I. Raptis, and E. Gogolides, Microelectron. Eng. 57-58, 547 (2001).
11. E. Gogolides, P. Argitis, A. Tserepi, E. Tegou, C. Diakoumakos, V. Constantoudis, G. Patsis, C. Cefalas, and E. Sarantopoulou, 2nd International Symposium on 157-nm Lithography, Dana Point, CA (2001)
12. V. Bellas, E. Tegou, I. Raptis, E. Gogolides, P. Argitis, H. Iatrou, N. Hadjichristidis, E. Sarantopoulou, and A. C. Cefalas, J. Vac. Sci. Technol. B 20, 2902 (2002).
13. M. Pons, J. Pelletier, O. Joubert, and P. Paniez, Jpn. J. Appl. Phys. 34, 3723 (1995)
14. C. Monget and O. Joubert, J. Vac. Sci. Technol. B 17, 1406 (1999).
15. A. M. Goethals, F. Van Roey, T. Sugihara, L. Van den hove, J. Vertonamen, and W. Klippert, J. Vac. Sci. Technol. B 16, 3322 (1998).
16. G. P. Patsis, A. Tserepi, I. Raptis, N. Glezos, E. Gogolides, and E. S. Valamontes, J. Vac. Sci. Technol. B 18, 3292 (2000).
17. G. Reynods and J. Taylor, J. Vac. Sci. Technol. B 17, 2723 (1999).
18. S. Winkelmeier, M. Sarstedt, M. Ereken, M. Goethals, and K. Ronse, Microelectron. Eng. 57-58, 665 (2001).
19. G. P. Patsis, V. Constantoudis, A. Tserepi, E. Gogolides, and G. Grozev, J. Vac. Sci. Technol. B (submitted for publication).
20. D. Eon, L. de Poucques, M. C. Peignon, Ch. Cardinaud, G. Turban, A. Tserepi, G. Cordoyiannis, E. S. Valamontes, I. Raptis, and E. Gogolides, Microelectron. Eng. 61-62, 901 (2002).
21. M. Hatzakis, J. Shaw, E. Babich, and J. Paraszczak, J. Vac. Sci. Technol. B 6, 2224 (1988).
22. F. Family, Physica A 168, 561 (1990).
23. M. C. Salvadori, M. G. Silveira, and M. Cattani, Phys. Rev. E 58, 6814 (1998).
24. Y. B. Park and S. W. Rhee, Surf. Coat. Technol. 137, 265 (2001).
25. H. P. Koh, Q. Y. Lin, X. Hu, and L. Chan, Proc. SPIE 3999, 240 (2000).
26. G. Reynolds and J. Taylor, J. Vac. Sci. Technol. B 17, 334 (1999).
27. A. M. Hynes, H. Ashraf, J. K. Bhardwaj, J. Hopkins, I. Johnston, and J. N. Shepherd, Sens. Actuators 74, 13 (1999).
28. J. W. Bartha, J. Greschner, M. Puech, and P. Maquin, Microelectron. Eng. 27, 453 (1995).