Resist and process implementation issues in future lithography processes for ULSI applications

Microelectronic Engineering

Volumn 67-68, Issue , 2003, Pages 300-305

  Ronse, K ^a  

^a IMEC   (Belgium)

Author keywords

157 nm lithography; 193 nm lithography; Extreme UV lithography; Photo resist; ULSI

Indexed keywords

PHASE SHIFT; RAYLEIGH FADING; ULSI CIRCUITS;

BI-LAYER RESISTS;

PHOTORESISTS;

EID: 0037683095     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00082-0     Document Type: Conference Paper

References (10)

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3. Goethals A.M., Vandenberghe G., Pollentier I., Ercken M., Bisschop P., Maenhoudt M., Ronse K. Recent progress in ArF lithography for the 100 nm node. J. Photopolym. Sci. Technol. 14:(3):2001;333-340.
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9. S. Kodama, I. Kaneko, Y. Takebe, S. Okada, Y. Kawaguchi, N. Shida, S. Ishikawa, M. Toriumi, T. Itani, Synthesis of novel fluoropolymers for 157-nm photoresists by cyclopolymerization [4690-10], In: Advances in Resist Technology and Processing XIX, Proc. SPIE, Vol. 4690 (2002).
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