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Volumn , Issue , 2003, Pages 92-98

New observance and analysis of various guard-ring structures on latch-up hardness by backside photo emission image

Author keywords

Latch Up; Photon emission microscope

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; IMAGE ANALYSIS; PHOTOEMISSION;

EID: 0037634701     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (8)

References (10)
  • 2
    • 0025484484 scopus 로고
    • Analysis of latch-up induced photo emission
    • Takahiro Aoki, Akira Yoshii, "Analysis of Latch-up Induced Photo Emission," IEEE Trans. Electron Device, pp.2080-2083, 1990
    • (1990) IEEE Trans. Electron Device , pp. 2080-2083
    • Aoki, T.1    Yoshii, A.2
  • 3
    • 0026258503 scopus 로고
    • New physical model of multiplication-induced breakdown in MOFETS
    • Tomasz Skotnicki, Grrard Merckel, and Abderrahman Merrachi, "New Physical Model of multiplication-induced breakdown in MOFETS," Solid-State Electronics, pp. 1297-1307, 1991
    • (1991) Solid-State Electronics , pp. 1297-1307
    • Skotnicki, T.1    Merckel, G.2    Merrachi, A.3
  • 4
    • 0023330770 scopus 로고
    • Three-dimensional distribution of CMOS Latch-up current
    • Enrico Sangiorgi, Bruno Ricco, and L. Semin, "Three-dimensional distribution of CMOS Latch-up current," IEEE Electron Device lett.,pp. 154-156., 1987
    • (1987) IEEE Electron Device Lett. , pp. 154-156
    • Sangiorgi, E.1    Ricco, B.2    Semin, L.3
  • 5
    • 0024012253 scopus 로고
    • Hysteresis cycle in the latch-up characteristics of wide MOS structures
    • L. Selmi, Enrico Sangiorgi, D. Re, and Bruno Ricco, "Hysteresis cycle in the Latch-Up characteristics of wide MOS structures," IEEE Electron Device lett., pp. 214-216, 1988
    • (1988) IEEE Electron Device Lett. , pp. 214-216
    • Selmi, L.1    Sangiorgi, E.2    Re, D.3    Ricco, B.4
  • 7
    • 0038226070 scopus 로고    scopus 로고
    • An analytical model of positive H.B.M. ESD current distribution and the modified multi-finger protection structure
    • Jian-Hsing Lee, Jiaw-Ren Shih, Boon-Kihm Liew, Huey-Liang Hwang, "An analytical Model of positive H.B.M. ESD current distribution and the modified Multi-finger protection structure," will be published in JJAP 1999.
    • (1999) JJAP 1999
    • Lee, J.-H.1    Shih, J.-R.2    Liew, B.-K.3    Hwang, H.-L.4
  • 8
    • 0027702156 scopus 로고
    • A discussion on the temperature dependence of latch-up trigger current in CMOS/BiCMOS structures
    • Takahiro Aoki, "A discussion on the temperature dependence of Latch-up Trigger current in CMOS/BiCMOS Structures," IEEE Trans. Electron Device, pp.2023-2028, 1993
    • (1993) IEEE Trans. Electron Device , pp. 2023-2028
    • Aoki, T.1
  • 9
    • 11544323190 scopus 로고
    • The dependence of transistor parameters on the distribution of base layer resistivity
    • J. R. Moll, and I. M. Ross, The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity," Proceeding of the IRE, pp. 72-78, 1956.
    • (1956) Proceeding of the IRE , pp. 72-78
    • Moll, J.R.1    Ross, I.M.2
  • 10
    • 0014619927 scopus 로고
    • Current crowding on metal contacts to planar devices
    • Helmuth Murrmann and Dietrich Widmann, "Current Crowding on metal contacts to planar Devices," IEEE Trans. Electron Device., pp.1022-1024, 1969.
    • (1969) IEEE Trans. Electron Device. , pp. 1022-1024
    • Murrmann, H.1    Widmann, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.