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Volumn , Issue , 2003, Pages 85-91

A new I/O signal latchup phenomenon in voltage tolerant ESD protection circuits

Author keywords

ESD; I O; Latchup; TLP

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC POWER SYSTEMS; FAILURE ANALYSIS;

EID: 0038310272     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (16)

References (6)
  • 1
    • 0024122729 scopus 로고
    • Internal chip ESD phenomena beyond the protection circuit
    • C. Duvvury, R. Rountree, and O. Adams, "Internal Chip ESD Phenomena Beyond the Protection Circuit," IEEE Tran. on Electron Devices, ED-35, pp. 2133-2139, 1988.
    • (1988) IEEE Tran. on Electron Devices , vol.ED-35 , pp. 2133-2139
    • Duvvury, C.1    Rountree, R.2    Adams, O.3
  • 4
    • 0034546887 scopus 로고    scopus 로고
    • Engineering the cascoded NMOS output buffer for maximum Vtl
    • J. Miller, M. Khazhinsky, and J. Weldon, "Engineering the Cascoded NMOS Output Buffer for Maximum Vtl," EOS/ESD Symp. Proc., pp. 306-317, 2000.
    • (2000) EOS/ESD Symp. Proc. , pp. 306-317
    • Miller, J.1    Khazhinsky, M.2    Weldon, J.3
  • 5
    • 0032316866 scopus 로고    scopus 로고
    • ESD protection for mixed-voltage I/O using NMOS transistors stacked in a cascoded configuration
    • W.Anderson, D. Karakauer, "ESD Protection for Mixed-Voltage I/O Using NMOS Transistors Stacked in a Cascoded Configuration," EOS/ESD Symp. Proc., pp. 54-62, 1998.
    • (1998) EOS/ESD Symp. Proc. , pp. 54-62
    • Anderson, W.1    Karakauer, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.