Evolution of the 1600 V, 20 A, SiC bipolar junction transistors

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 271-274

  Agarwal, Anant K ^a   Krishnaswami, Sumi ^a   Richmond, James ^a   Capell, Craig ^a   Ryu, Sei Hyung ^a   Palmour, John W ^a   Balachandran, Santosh ^b   Chow, T Paul ^b   Bayne, Stephen ^c   Geil, Bruce ^c   Scozzie, Charles ^c   Jones, Kenneth A ^c  

^a Arkansas Power Electronics International Inc   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; SEMICONDUCTING SILICON;

BIPOLAR JUNCTION TRANSISTORS; CURRENT GAIN; SIC;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 27744459641     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Stephen E. Saddow and Anant Agarwal, "Advances in Silicon Carbide Processing and Applications," Artech House, 2004, pp. 177-201.
2. Sei-Hyung Ryu, Anant Agarwal, Ranbit Singh and John Palmour, "1800 V NPN Bipolar Junction Transistors in 4H-SiC", IEEE Elec. Dev. Lett., Vol. 22, pp. 124-126, 2001.
3. Anant K. Agarwal, S-H. Ryu, J. Richmond, C. Capell, J. Palmour, Y. Tang, S. Balachandran, T.P. Chow, "Large Area, 1.3 kV, 17 A, Bipolar Junction Transistors in 4H-SiC," ISPSD Proceedings, pp. 135-138, 2003.
4. A. K. Agarwal, S-H. Ryu, J. Richmond, C. Capell, J. Palmour, S. Balachandran, T.P. Chow, B. Geil, S. Bayne, C. Scozzie and K.A. Jones, "Recent Progress in SiC Bipolar Junction Transistors," ISPSD Proceedings, pp. 361-364, 2004.
5. th European Conference on Silicon Carbide and Related Materials (ECSCRM) Bologna, Italy, 2004.
6. S. Krishnaswami, A. Agarwal, S.H. Ryu, C. Capell, J. Richmond, J. Palmour, S. Balachandran, T. P. Chow, S. Bayne, B. Geil, K. Jones and C. Scozzie, "1000-V, 30-A 4H-SiC BJTs With High Current Gain," IEEE Electron Device Letters, Vol. 26, No. 3, pp. 175-177, March 2005.
7. P. A. Ivanov, M. E. Levinshtein, S. L. Rumyantsev, S-H. Ryu, A. K. Agarwal, J. W. Palmour, "Factors limiting the current gain high voltage 4H-SiC npn-BJTs," Solid State Electronics, Vol. 46, pp. 567-572, 2002.