4kV 4H-SiC epitaxial emitter bipolar junction transistors

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 291-294

  Balachandran, S ^a   Chow, T P ^a   Agarwal, A ^b   Scozzie, C ^c   Jones, K A ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Arkansas Power Electronics International Inc   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR JUNCTION TRANSISTORS; EMITTER CURRENT GAIN; SIC; SPECIFIC-ON-RESISTANCE;

DESIGN; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 27744553927     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. T. P. Chow, "SiC and GaN power devices", in Pro. Mat. Res. Soc. Spring Meeting, Apr. 2000.
2. S.H. Ryu, A. Agarwal and J.W. Palmour, "1800 V NPN Bipolar Junction Transistors in 4H-SiC," IEEE Electron Device Letters, vol. 22, pp. 124-6, 2001.
3. ceo > 3,200V", in Proc. Int. Symp. Power Semiconductor Devices and ICs, pp.57-60, 2002.
4. A.K. Agarwal, S.H. Ryu, J. Richmond, C. Capell, J.W. Palmour, Y. Tang, S. Balachandran and T.P. Chow, "Large Area, 1.3kV, 17 A, Bipolar Junction Transistors in 4H-SiC", in Proc. Int. Symp. Power Semiconductor Devices and IC, pp.135-138, 2003.
5. T.P. Chow, N. Ramungul, J. Fedison, and Y. Tang, "SiC Power Bipolar Transistors and Thyristors", Silicon Carbide Recent Advances, Springer, 2003.
6. P.A. Losee, S. Balachandran, L. Zhu, C. Li, J. Seiler, T.P. Chow, I.B. Bhat, R.J. Gutmann, "High Voltage 4H-SiC PiN rectifiers with single implant, multi-zone JTE termination", in Proc. Int. Symp. Power Semiconductor Devices and IC, pp.301-304, 2004.
7. CBO for 4H and 6H polytype SiC Bipolar Junction Transistors", in Material Science Forum, pp.893-896, 2004.