Improvement and analysis of implanted-emitter bipolar junction transistors in 4H-SiC

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1329-1332

  Tang, Yi ^a   Fedison, Jeffery B ^a   Chow, T Paul ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

4H SiC; Bipolar junction transistor; Implant

Indexed keywords

BIPOLAR TRANSISTORS; IMPLANTS (SURGICAL); ANNEALING; ELECTRIC POTENTIAL; NEGATIVE TEMPERATURE COEFFICIENT; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

4H-SIC; ANNEALING CYCLES; BLOCKING VOLTAGE; COMMON-EMITTER CURRENT GAIN; CURRENT GAINS; BIPOLAR JUNCTION TRANSISTORS;

SILICON CARBIDE; BIPOLAR TRANSISTORS;

EID: 0036429718     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1329     Document Type: Conference Paper

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