1.5kV novel 4H-SiC Lateral Channel (LC) JBS rectifiers with low leakage current and capacitance

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 283-286

  Zhu, Lin ^a   Li, Canhua ^a   Chow, T Paul ^a   Bhat, Ishwara B ^a   Jones, Kenneth A ^b   Scozzie, C ^b   Agarwal, Anant ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

JUNCTION CAPACITANCES; SWITCHING SPEEDS;

CAPACITANCE; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS;

ELECTRIC RECTIFIERS;

EID: 27744537916     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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3. K. Asano, and Y. Sugawara, Proceedings of ISPSD, pp. 97-100, 2000.
4. R. Singh, S-H. Ryu, and J.W. Palmour, Proceedings of ISPSD, pp. 101-104, 2000.
5. L.Zhu, M. Shanbhag, T.P. Chow, K.A. Jones, M.H. Ervin, P.B. Shah, M.A. Derenge, R.D. Vispute, T. Venkatesan and A. Agarwal, European Conference on Silicon Carbide and Related Materials, Late News Paper, Sept 2002.