Improved high-voltage lateral RESURF MOSFETs in 4H-SiC

IEEE Electron Device Letters

Volumn 22, Issue 5, 2001, Pages 209-211

  Banerjee, S ^a,b   Chatty, K ^a,b   Chow, T P ^a,b   Gutmann, R J ^a,b  

^a IEEE   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Breakdown; Lateral device; On resistance; Power MOSFET; RESURF; Silicon carbide

Indexed keywords

AVALANCHE BREAKDOWN VOLTAGE; REDUCED SURFACE FIELD (RESURF);

ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; FABRICATION; SEMICONDUCTOR DOPING; SILICON CARBIDE;

MOSFET DEVICES;

EID: 0035338144     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.919231     Document Type: Article

References (13)

1. Silicon carbide high-power devices
2. Wide bandgap semiconductor power devices
3. High-voltage double-implanted power MOSFETs in 6 H-SiC
4. 1.1 kV 4 H-SiC power UMOSFETs
5. High-voltage thin layer devices (RESURF devices)
6. Lateral DMOS power transistor design
7. Comparison of lateral and vertical DMOS specific on-resistance
8. High-voltage lateral RESURF MOSFETs on 4H-SiC
9. Ionization energies and electron mobilities in phosphorus and nitrogen-implanted 4 H-Silicon carbide
10. Investigation of lateral RESURF 6 H-SiC MOSFETs
11. Temperature dependence of Fowler-Nordheim current in 6 H- and 4 H-SiC MOS capacitors
12. Insulator investigation on SiC for improved reliability
13. Effect of processing conditions on inversion layer mobility and interface state density in 4 H-SiC MOSFETs