Growth of InNAs by low-pressure metalorganic chemical vapor deposition employing microwave-cracked nitrogen and in situ generated arsine radicals

Journal of Crystal Growth

Volumn 222, Issue 3, 2001, Pages 511-517

  Naoi, H ^a   Shaw, D M ^b   Naoi, Y ^a   Collins, G J ^b   Sakai, S ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b Engineering Research Center and Hydraulics Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL ORIENTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PHASE SEPARATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR PLASMAS; SUBSTRATES; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

LOW-PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION (LPMOCVD);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035152091     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00975-1     Document Type: Article

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