Dislocation locking by nitrogen impurities in FZ-silicon

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 996-1000

  Giannattasio, A ^a   Senkader, S ^a   Falster, R J ^b   Wilshaw, P R ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b MEMC Electronic Materials SpA   (Italy)

Author keywords

Diffusion; Dislocation; Nitrogen; Silicon

Indexed keywords

ANNEALING; BINDING ENERGY; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); SILICON; STRESSES; THERMAL EFFECTS;

DISLOCATION LOCKING; PINNING FORCE;

CRYSTAL GROWTH;

EID: 0346055258     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.191     Document Type: Conference Paper

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