High-indium-content inxGa1-xAs/GaAs quantum wells with emission wavelengths above 1.25 μm at room temperature

Applied Physics Letters

Volumn 84, Issue 25, 2004, Pages 5100-5102

  Ni, H Q ^a   Niu, Z C ^a   Xu, X H ^a   Xu, Y Q ^a   Zhang, W ^a   Wei, X ^a   Bian, L F ^a   He, Z H ^a   Han, Q ^a   Wu, R H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; ELECTRON EMISSION; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; PHOTOLUMINESCENCE; REACTION KINETICS; RELAXATION PROCESSES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH AT HALF MAXIMUM (FWHM); MULTI-QUANTUM WELLS (MQW); SINGLE QUANTUM WELLS (SQW); STRAIN RELAXATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 3142742332     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1762985     Document Type: Article

References (26)

1. J. J. Rosenberg, M. Benlamri, P. D. Kirchner, J. M. Woodall, and G. D. Pettit, IEEE Electron Device Lett. EDL-6, 491 (1985).
2. W. D. Laidig, Y. F. Lin, and P. J. Caldwell, J. Appl. Phys. 57, 33 (1985).
3. R. Nagarajan, T. Fukushima, J. E. Bowers, R. S. Geels, and L. A. Coldren, Appl. Phys. Lett. 58, 2326 (1991).
4. B. F. Levine, J. Appl. Phys. 74, R1 (1993).
5. E. M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, M. Dumitrescu, and S. Spanulescu, Appl. Phys. Lett. 80, 3054 (2002).
6. Z. C. Niu, H. Q. Ni, X. H. Xu, W. Zhang, Y. Q. Xu, Q. Han, and R. H. Wu, Phys. Rev. B 68, 235326 (2003).
7. T. G. Andersson, Z. G. Chen, V. D. Kulakovskii, A. Uddin, and J. T. Vallin, Appl. Phys. Lett. 51, 752 (1987).
8. C. R. Wie, J. Appl. Phys. 65, 2267 (1989).
9. Y. Ohizumi, T. Tsuruoka, and S. Ushioda, J. Appl. Phys. 92, 2385 (2002).
10. X. Deng, W. Lui, M. E. Lin, and J. Zhang, J. Vac. Sci. Technol. B 19, 1558 (2001).
11. K. Nii, R. Kuriyama, T. Hiraoka, T. Kitada, S. Shimomura, and S. Hiyamizu, J. Vac. Sci. Technol. B 17, 1167 (1999).
12. T. Anan, K. Nishi, and S. Sugou, Appl. Phys. Lett. 60, 3159 (1992).
13. J. C. Woicik, K. E. Miyano, J. G. Pellegrino, P. S. Shaw, S. H. Southworth, and B. A. Karlin, Appl. Phys. Lett. 68, 3010 (1996).
14. Y. C. Chen and P. K. Bhattacharya, J. Appl. Phys. 73, 7389 (1993).
15. D. J. Dunstan, P. Kidd, L. K. Howard, and R. H. Dixon, Appl. Phys. Lett. 59, 3390 (1991).
16. B. Elman, E. S. Koteles, P. Melman, K. Ostreicher, and C. Sung, J. Appl. Phys. 70, 2634 (1991).
17. L. W. Sung and H. H. Lin, Appl. Phys. Lett. 83, 1107 (2003).
18. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
19. Z. Pan, Y. T. Wang, L. H. Li, H. Wang, Z. Wei, Z. Q. Zhou, and Y. W. Lin, J. Appl. Phys. 86, 5302 (1999).
20. G. L. Price, Phys. Rev. Lett. 66, 469 (1991).
21. S. Fukatsu, N. Usami, K. Fujita, H. Yaguchi, Y. Shiraki, and R. Ito, J. Cryst. Growth 127, 401 (1993).
22. D. J. Eaglesham and M. Cerullo, Appl. Phys. Lett. 58, 2276 (1991).
23. L. Wang and A. Zunger, J. Chem. Phys. 100, 2394 (1994).
24. A. J. Williamson, J. Kim, L. W. Wang, S. H. Wei, and A. Zunger, cond-mat/9805051 (unpublished).
25. S. Fafard, S. Raymond, G. Wang, R. Leon, D. Leonard, S. Charbonneau, J. L. Merz, P. M. Petroff, and J. E. Bowers, Surf. Sci. 361/362, 778 (1996).
26. D. Vignard, Y. Cordier, P. Miska, and D. Ferré, 28th Institute Phys. Conference Series 2001, Vol. 170, p. 537.