Metal-ferroelectric-metal structures with Schottky contacts. II. Analysis of the experimental current-voltage and capacitance-voltage characteristics of Pb (Zr,Ti) O 3 thin films

Journal of Applied Physics

Volumn 98, Issue 12, 2005, Pages

  Pintilie, L ^a   Boerasu, I ^a   Gomes, M J M ^b   Zhao, T ^c   Ramesh, R ^d   Alexe, M ^e  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY OF MINHO   (Portugal)

^c UNIVERSITY OF MARYLAND   (United States)

^d Lawrence Berkeley National Laboratory   (United States)

^e MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

PB (ZR,TI) O 3 THIN FILMS; RICHARDSON'S CONSTANT; SCHOTTKY CONTACTS; SPACE-CHARGE DENSITY;

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC SPACE CHARGE; ELECTRODES; FERROELECTRICITY; POLARIZATION; SEMICONDUCTOR MATERIALS; SURFACE PROPERTIES;

THIN FILMS;

EID: 29744457491     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2148623     Document Type: Review

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