Thickness of the near-interface regions and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films

Applied Physics Letters

Volumn 81, Issue 27, 2002, Pages 5204-5206

  Chu, D P ^a,b   Zhang, Z G ^b   Migliorato, P ^b   McGregor, B M ^a,b   Ohashi, K ^c   Hasegawa, K ^c   Shimoda, T ^c  

^a Cambridge Research Laboratory of Epson   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c SEIKO EPSON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRODES; INTERFACES (MATERIALS); LEAD ALLOYS;

OHMIC RESISTIVITY;

FERROELECTRIC THIN FILMS;

EID: 0142256666     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1532548     Document Type: Article

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