Investigation of the thermal noise of MOS transistors under analog and RF operating conditions

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 87-90

  Brederlow, Ralf ^a   Wenig, Georg ^b   Thewes, Roland ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS;

CLASSICAL NOISE; DRAIN VOLTAGE; NOISE BEHAVIOR; NOISE MODELING; OPERATING CONDITION; SHORT-CHANNEL DEVICES;

THERMAL NOISE;

EID: 84907685799     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194877     Document Type: Conference Paper

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