An analytical thermal noise model of deep submicron MOSFET's for circuit simulation with emphasis on the BSIM3v3 SPICE model

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 460-463

  Klein, P ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; COMPUTER SIMULATION; SPICE;

CHANNEL LENGTH; DEEP SUB-MICRON; DOWN-SCALING; ELECTRICAL FIELD; NOISE TEMPERATURE; SIMULATION ERROR; SPICE MODELING; THERMAL EQUILIBRIUMS;

THERMAL NOISE;

EID: 84908205572     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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2. Luiz M. Franca-Neto et. ai, 'Low Noise FET Design for Wifeless Communications', Technical Digest mDM, 1997.
3. B. Lemaitre, 'An improved analytical LDD-MOSFET model for digital and analog circuit simulation for all channel length down to deep-submicron', Technical Digest moM, 1991.
4. RM. D. A. Velghe et. aI., 'Compact MOS modeling for analog circuit simulation', Technical Digest mDM, 1993.
5. Y. Cheng et. aI., BS1M3v3 Manual, University of California, 1995, 1996.
6. Y. P. Tsividis, 'Operation and Modeling of the MOD Transistor', New York, McGraw-Hili, 1988.
7. S. M. Sze, 'Physics of Semiconductor Devices', New York, John Wiley & Sons, 1981.
8. T. W. Sigmon et. ai, 'Diffusivity of electrons and holes in silicori', Appl. Phys. Lett. 15, 1969, pp. 320-322.
9. J. Frey, 'Effects of intervalley scattering on noise in GaAs and IriP field-effect trasistors', mEE Transactions on Electron Devices, 1976, pp. 1298-1303.