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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2064-2068

Selective molecular beam epitaxy growth of GaAs hexagonal nanowire networks on (111)B patterned substrates

(4) Yoshida, Souichi a Tamai, Isao a Sato, Taketomo a Hasegawa, Hideki a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

(111)B substrates; AlGaAs; GaAs; Hexagonal network; MBE; Quantum wire; Selective growth

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ETCHING; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; NANOSTRUCTURED MATERIALS; OPTIMIZATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

BINARY DECISION DIAGRAM (BDD); HEXAGONAL NETWORKS; SELECTIVE GROWTH; SINGLE ELECTRON TRANSISTORS (SET);

SEMICONDUCTOR QUANTUM WIRES;

EID: 3142530843 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.2064 Document Type: Conference Paper

Times cited : (10)

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