SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of Non-Crystalline Solids

Volumn 352, Issue 1, 2006, Pages 92-97

Tunneling in sub-5 nm La2O3 films deposited by E-beam evaporation

(4) Miranda, E a Molina, J b Kim, Y b Iwai, H b

a UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Electrical and electronic properties; Films and coatings; Vapor phase deposition

Indexed keywords

COATINGS; ELECTRIC POTENTIAL; ELECTRON BEAMS; ELECTRON TUNNELING; EVAPORATION; FILMS; LEAKAGE CURRENTS; MATHEMATICAL MODELS;

ELECTRICAL AND ELECTRONIC PROPERTIES; ELECTRICAL STRESS; FILMS AND COATINGS; VAPOR PHASE DEPOSITION;

LANTHANUM COMPOUNDS;

EID: 29244435007 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2005.11.001 Document Type: Article

Times cited : (11)

References (22)

1
- 0035872897
- G. Wilk, R. Wallace, and J. Anthony J. Appl. Phys. 89 2001 5243
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.¹ Wallace, R.² Anthony, J.³

2
- 0035796727
- S. Stemmer, J. Maria, and A. Kingon Appl. Phys. Lett. 79 2001 102
- (2001) Appl. Phys. Lett. , vol.79 , pp. 102
- Stemmer, S.¹ Maria, J.² Kingon, A.³

3
- 0033712917
- A. Chin, Y. Wu, S. Chen, C. Liao, W. Chen, in: Proc. of Symp. on VLSI Tech. Dig. of Technical Papers, 16, 2000.
- (2000) Proc. of Symp. on VLSI Tech. Dig. of Technical Papers , pp. 16
- Chin, A.¹ Wu, Y.² Chen, S.³ Liao, C.⁴ Chen, W.⁵

4
- 0042882672
- J. Jun, D. Choi, K. Kim, K. Oh, and C. Hwang Jpn. J. Appl. Phys. 42 2003 3519
- (2003) Jpn. J. Appl. Phys. , vol.42 , pp. 3519
- Jun, J.¹ Choi, D.² Kim, K.³ Oh, K.⁴ Hwang, C.⁵

5
- 0000552940
- S. Guha, E. Cartier, M. Gribelyuk, N. Bojarczuk, and M. Copel Appl. Phys. Lett. 77 2000 2710
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2710
- Guha, S.¹ Cartier, E.² Gribelyuk, M.³ Bojarczuk, N.⁴ Copel, M.⁵

6
- 0042848701
- S. Ohmi, C. Kobayashi, I. Kashiwagi, C. Ohshima, H. Ishiwara, and H. Iwai J. Electrochem. Soc. 150 2003 F134
- (2003) J. Electrochem. Soc. , vol.150
- Ohmi, S.¹ Kobayashi, C.² Kashiwagi, I.³ Ohshima, C.⁴ Ishiwara, H.⁵ Iwai, H.⁶

7
- 0036540855
- T. Kauerauf, R. Degraeve, E. Cartier, C. Soens, and G. Groeseneken IEEE Electron. Dev. Lett. 23 2002 215
- (2002) IEEE Electron. Dev. Lett. , vol.23 , pp. 215
- Kauerauf, T.¹ Degraeve, R.² Cartier, E.³ Soens, C.⁴ Groeseneken, G.⁵

8
- 0032689199
- D. Goguenheim, A. Bravaix, D. Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, and A. Meinertzhagen Microelectron. Reliab. 39 1999 165
- (1999) Microelectron. Reliab. , vol.39 , pp. 165
- Goguenheim, D.¹ Bravaix, A.² Vuillaume, D.³ Mondon, F.⁴ Candelier, Ph.⁵ Jourdain, M.⁶ Meinertzhagen, A.⁷

9
- 0035152086
- M. Vexler, A. Shulekin, Ch. Dieker, V. Zaporojtschenko, H. Zimmermann, W. Jager, I. Grekhov, and P. Seegebrecht Solid-State Electron. 45 2001 19
- (2001) Solid-State Electron. , vol.45 , pp. 19
- Vexler, M.¹ Shulekin, A.² Dieker, Ch.³ Zaporojtschenko, V.⁴ Zimmermann, H.⁵ Jager, W.⁶ Grekhov, I.⁷ Seegebrecht, P.⁸

10
- 0030268869
- F. Pio Microelectron. J. 27 1996 675
- (1996) Microelectron. J. , vol.27 , pp. 675
- Pio, F.¹

11
- 36849097956
- M. Lenzlinger, and E. Snow J. Appl. Phys. 40 1969 278
- (1969) J. Appl. Phys. , vol.40 , pp. 278
- Lenzlinger, M.¹ Snow, E.²

12
- 0031098076
- D. Hsu Solid-State Electron. 41 1997 513
- (1997) Solid-State Electron. , vol.41 , pp. 513
- Hsu, D.¹

13
- 14844295022
- Y. Kim, S. Ohmi, K. Tsutsui, and H. Iwai Solid-State Electron. 49 2005 825
- (2005) Solid-State Electron. , vol.49 , pp. 825
- Kim, Y.¹ Ohmi, S.² Tsutsui, K.³ Iwai, H.⁴

14
- 0035478005
- Y. Chiou, J. Gambino, and M. Mohammad Solid-State Electron. 45 2001 1787
- (2001) Solid-State Electron. , vol.45 , pp. 1787
- Chiou, Y.¹ Gambino, J.² Mohammad, M.³

15
- 0028430427
- K. Schuegraf, and C. Hu IEEE Trans. Electron. Dev. 41 1994 761
- (1994) IEEE Trans. Electron. Dev. , vol.41 , pp. 761
- Schuegraf, K.¹ Hu, C.²

16
- 79956033267
- Y. Yeo, T. King, and C. Hu Appl. Phys. Lett. 81 2002 2091
- (2002) Appl. Phys. Lett. , vol.81 , pp. 2091
- Yeo, Y.¹ King, T.² Hu, C.³

17
- 0041511849
- H. Takeuchi, and T. King Appl. Phys. Lett. 83 2003 788
- (2003) Appl. Phys. Lett. , vol.83 , pp. 788
- Takeuchi, H.¹ King, T.²

18
- 0035395857
- W. Lee, and C. Hu IEEE Trans. Electron. Dev. 48 2001 1366
- (2001) IEEE Trans. Electron. Dev. , vol.48 , pp. 1366
- Lee, W.¹ Hu, C.²

19
- 0034217328
- Y. Wu, M. Yang, A. Chin, W. Chen, and C. Kwei IEEE Electron. Dev. Lett. 21 2000 341
- (2000) IEEE Electron. Dev. Lett. , vol.21 , pp. 341
- Wu, Y.¹ Yang, M.² Chin, A.³ Chen, W.⁴ Kwei, C.⁵

20
- 0032097793
- E. Vogel, K. Ahmed, B. Hornung, W. Henson, P. McLarty, G. Locovsky, J. Hauser, and J. Wortman IEEE Trans. Electron. Dev. 45 1998 1350
- (1998) IEEE Trans. Electron. Dev. , vol.45 , pp. 1350
- Vogel, E.¹ Ahmed, K.² Hornung, B.³ Henson, W.⁴ McLarty, P.⁵ Locovsky, G.⁶ Hauser, J.⁷ Wortman, J.⁸

21
- 0034293823
- S. Mudanai, Y. Fan, O. Ouyang, A. Tasch, and S. Banerjee IEEE Trans. Electron. Dev. 47 2000 1851
- (2000) IEEE Trans. Electron. Dev. , vol.47 , pp. 1851
- Mudanai, S.¹ Fan, Y.² Ouyang, O.³ Tasch, A.⁴ Banerjee, S.⁵

22
- 0344946199
- J. Baniecki, T. Shioga, K. Kurihara, and N. Kamehara J. Appl. Phys. 94 2003 6741
- (2003) J. Appl. Phys. , vol.94 , pp. 6741
- Baniecki, J.¹ Shioga, T.² Kurihara, K.³ Kamehara, N.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.