Current model considering oxide thickness non-uniformity in a MOS tunnel structure

Solid-State Electronics

Volumn 45, Issue 1, 2001, Pages 19-25

  Vexler, M I ^a   Shulekin, A F ^a   Dieker, Ch ^b   Zaporojtschenko, V ^b   Zimmermann, H ^b   Jager W ^b   Grekhov, I V ^a   Seegebrecht, P ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; HOLE TRAPS; SEMICONDUCTOR DEVICE MODELS; TRANSMISSION ELECTRON MICROSCOPY;

HOLE TUNNEL CURRENTS; WEAK-INVERSION THEORY;

MOSFET DEVICES;

EID: 0035152086     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00158-1     Document Type: Article

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