Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN

Physica Status Solidi (B) Basic Research

Volumn 241, Issue 12, 2004, Pages 2820-2824

  Yan, J ^a   Kappers, M J ^a   Crossley, A ^b   McAleese, C ^a   Phillips, W A ^c   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c phconsult Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

OHMIC CONTACTS; OXYGEN; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; SPUTTERING; SURFACE PHENOMENA; X RAY PHOTOELECTRON SPECTROSCOPY;

LATTICE DISORDERING; OXYGEN PLASMA TREATMENT; PLASMA PRESSURE;

GALLIUM NITRIDE;

EID: 7444240724     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200405056     Document Type: Conference Paper

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