Low-threshold and high-power oxide-confined 850 nm AlInGaAs strained quantum-well vertical-cavity surface-emitting lasers based on intra-cavity contacted structure

Chinese Physics Letters

Volumn 22, Issue 12, 2005, Pages 3074-3076

  Chen, Min ^a   Guo, Xia ^a   Deng, Jun ^a   Gai, Hong Xing ^a   Dong, Li Min ^a   Qu, Hong Wei ^a   Guan, Bao Lu ^a   Gao, Guo ^a   Shen, Guang Di ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASER PULSES; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS; SURFACE EMITTING LASERS; TRANSCEIVERS;

HIGH POWER; INTRACAVITIES; LOW THRESHOLDS; LOW-HIGH; OXIDE CONFINED; OXIDE-APERTURE; STRAINED QUANTUM WELLS; THRESHOLD CURRENTS; THRESHOLD POWER; THRESHOLD-CURRENT DENSITY;

THRESHOLD CURRENT DENSITY;

EID: 28744458679     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/22/12/025     Document Type: Article

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