Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5364, Issue , 2004, Pages 221-226

  Chang, Y S ^a   Kuo, H C ^a   Lai, F I ^a   Chang, Y A ^a   Laih, L H ^a   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

High speed; InGaAsP; MOCVD; Strain compensated; VCSELs

Indexed keywords

CURRENT DENSITY; ELECTRIC RESISTANCE; LIGHT MODULATION; LOCAL AREA NETWORKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

INGAASP; STRAIN COMPENSATED MQWS; VCSELS; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

QUANTUM WELL LASERS;

EID: 3543112557     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.530055     Document Type: Conference Paper

References (8)

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8. www.crosslight.com