850 nm VCSEL's with buried AlxOy current apertures

LEOS Summer Topical Meeting

Volumn , Issue , 1997, Pages 15-16

  Lin, Chao Kun ^a   MacDougal, Michael H ^a   Geske, Jon ^a   Bond, Aaron E ^a   Choi, Won Jin ^a   Dapkus, Daniel ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; HETEROJUNCTIONS; LIGHT MODULATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; REFLECTOMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

DISTRIBUTED BRAGG REFLECTORS (DBR); LIGHT CURRENT VOLTAGE CHARACTERISTICS; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0030691530     PISSN: 10994742     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)