Comparison the gain characteristic of AlInGaAs/AIGaAs and GaAs/AlGaAs quantum wells

Materials Science Forum

Volumn 475-479, Issue III, 2005, Pages 1685-1688

  Hongxing, Gai ^a   Jun, Deng ^a   Jianjun, Li ^a   Guangdi, Shen ^a   Jianxin, Chen ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

AlInGaAs; GaAs AlGaAs; Optical gain; Strained quantum well

Indexed keywords

ALUMINUM ALLOYS; ENERGY GAP; FERMI LEVEL; FUNCTIONS; GAIN MEASUREMENT; HETEROJUNCTIONS; INTERPOLATION; LINEARIZATION; PHOTONS; SCHEMATIC DIAGRAMS; SEMICONDUCTING GALLIUM ARSENIDE;

ALLNGAAS; GAAS/ALGAAS; OPTICAL GAINS; STRAINED QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 17044401000     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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