AlInGaAs/AlGaAs strained quantum well lasers grown by molecular beam epitaxy

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 18, Issue 4, 1997, Pages 313-316

  Yang, Guowen ^a   Xu, Zuntu ^a   Xu, Junying ^a   Zhang, Jingming ^a   Xiao, Jianwei ^a   Chen, Lianghui ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

STRAINED QUANTUM WELL LASER; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0031119258     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)