Low threshold MBE-grown AlInGaAs/AlGaAs strained multiquantum-well lasers by rapid thermal annealing

Electronics Letters

Volumn 32, Issue 22, 1996, Pages 2099-2100

  Ko, J ^a   Chen, C H ^a   Coldren, L A ^a  

^a University of California   (United States)

Author keywords

Molecular beam epitaxial growth; Rapid thermal processing; Semiconductor quantum wells

Indexed keywords

ANNEALING; COLOR CENTERS; CRYSTAL GROWTH; LASER PULSES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; WAVEGUIDES;

MULTIQUANTUM WELL LASERS (MQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030264705     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961378     Document Type: Article

References (8)

1. CORZINE, S., and COLDREN, L.A.: 'Theoretical gain in strained-layer quantum wells'. SPIE'93, 1993, 1850, pp. 177-188
2. WATERS, R.G., DALBY, R.J., BAUMANN, J.A., and SHEPARD, A.H.: 'Dark-line-resistant diode laser at 0.8μm comprising InAlGaAs strained quantum well', IEEE Photonics Technol. Lett., 1991, 3, pp. 409-411
3. KO, J., MONDRY, M.J., YOUNG, D.B., HU, S.Y., COLDREN, L.A., and GOSSARD, A.C.: 'Threshold reduction by rapid thermal annealing in MBE-grown AlInGaAs multiquantum well lasers on GaAs', Electron. Lett., 1996, 52, pp. 351-352
4. CHAND, N., JORDAN, A.S., and CHU, S.N.G.: 'Residual oxygen levels in AlGaAs/GaAs quantum-well laser structures: Effects of Si and Be doping and substrate misorientation', Appl. Phys. Lett. 1991, 59, pp. 3270-3272
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7. XIE, K., WIE, C.R., VARRIANO, J.A., and WICKS, G.W.: 'Improvement of GaAs/AlGaAs quantum well laser diodes by rapid thermal annealing', J. Electron. Mater., 1994, 23, pp. 1-6
8. MAUREL, P., NAGLE, J., and HIRTZ, J.P.: 'Influence of rapid thermal annealing on the properties of strained GaInAs quantum well lasers', Jpn. J. Appl. Phys., 1993, 32, pp. 1056-1059