980 nm oxide-confined vertical cavity surface emitting laser

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 25, Issue 3, 2004, Pages 262-265

  Qu, Hongwei ^a   Guo, Xia ^a   Huang, Jing ^a   Dong, Limin ^a   Lian, Peng ^a   Deng, Jun ^a   Zhu, Wenjun ^a   Zou, Deshu ^a   Shen, Guangdi ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Oxide aperture; Self aligning process; Vertical cavity surface emitting laser

Indexed keywords

ELECTRIC CURRENT CONTROL; ETCHING; LIGHT EMISSION; OXIDES;

OXIDE APERTURE; VERTICAL CAVITY SURFACE EMITTING LASER;

LASERS;

EID: 7244226405     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. Shin J H, Shin H E, Lee Y H, et al. Effect of carrier diffusion in oxidized vertical-cavity surface-emitting lasers determined from lateral spontaneous emission. Appl Phpy Lett, 1997, 70(20): 2652
2. Yang G M, Macdougal M H, Dapkus P D. Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation. Electron Lett 1995, 31(11): 886
3. Hayashi Y, Mukailhara T, Hartori N, et al. Lasing characteristics of low threshold oxide confinement InGaAs-GaAlAs vertical cavity surface emitting lasers. IEEE Photonics Technol Lett, 1995, 7(11): 123
4. Jager R, Jung C, Grabherr M, et al. 57% wallplug efficiency oxide-confined 850 nm wavelength GaAs VCSELs. Electron Lett, 1997, 33(4): 330
5. Lear K L, Choquette K D, Schneider R P,et al. Selectively oxidized vertical cavity surface emitting lasers with 50% power conversion efficiency. Electron Lett, 1995, 31(3): 208
6. Choquette K D, Chow W W, Crawford M H, et al. Threshold investigation of oxide-confined vertical-cavity laser diodes. Appl Phys Lett, 1996, 68(26): 3689
7. 0.89As quantum wells. Electron Lett, 1996, 32(14): 1287
8. 1-x-As selective wet oxidation. Infrared and Laser Engineering, 2003, 32(6): 647 (inChinese)
9. Choquette K D, Geib K M, Hammons B E, et al. Selective oxidation of buried AlGaAs versus AlAs layers. Appl Phys Lett, 1996, 69(10): 1385