Ultralow threshold 850-nm oxide-apertured vertical cavity lasers using AlInGaAs/AlGaAs strained active layers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3286, Issue , 1998, Pages 18-29

  Ko, Jack ^a   Hegblom, Eric R ^a   Akulova, Yuliya ^a   Margalit, Near M ^a   Coldren, Larry A ^a  

^a University of California   (United States)

Author keywords

Oxide aperture; Rapid thermal annealing; Strained active layer; Vertical cavity lasers

Indexed keywords

CURRENT DENSITY; DEGRADATION; RAPID THERMAL ANNEALING; SEMICONDUCTOR QUANTUM WELLS;

STRAINED ACTIVE ALYERS;

LASERS;

EID: 0032224211     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.305463     Document Type: Conference Paper

References (20)

1. AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy
2. Dark-line-resistant diode laser at 0.8 μm comprising inalgaas strained quantum well
3. Theoretical gain in strained-layer quantum wells
4. Low threshold MBE-grown AlInGaAs/AlGaAs strained multiquantum-well lasers by rapid thermal annealing
5. Selectively oxidized vertical cavity surface emitting lasers with 50% power conversion efficiency
6. Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors
7. Ultra-low threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation
8. Reduced optical scattering loss in vertical-cavity lasers using a thin (300Å) oxide aperture
9. 57% wallplug efficiency wide temperature range 840 nm wavelength oxide confined GaAs VCSELs
10. Submilliampere operation of selectively oxidized GaAs-QW vertical cavity lasers emitting at 840 nm
11. Oxide-confined 850 nm vertical-cavity lasers for multimode-fiber data communications
12. Scattering losses from dielectric apertures in vertical cavity lasers
13. Residual oxygen levels in AlGaAs/GaAs quantum-well laser structures: Effects of Si and Be doping and substrate misorientation
14. 2 source
15. Method for accurate growth of vertical-cavity surface emitting lasers
16. Threshold reduction by rapid thermal annealing in MBE-grown AlInGaAs multiquantum well lasers on GaAs
17. Low-threshold 840-nm laterally oxidized vertical-cavity lasers using AlInGaAs-AlGaAs strained active layers
18. Modal analysis of a small surface emitting laser with a selectively oxidized waveguide
19. Vertical cavity lasers with tapered oxide apertures for low scattering loss