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Volumn 33, Issue 18, 1997, Pages 1550-1551

AlInGaAs/AlGaAs strained-layer 850 nm vertical-cavity lasers with very low thresholds

Author keywords

Semiconductor junction lasers; Vertical cavity surface emitting lasers

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

EID: 0031207943     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971037     Document Type: Article
Times cited : (16)

References (6)
  • 1
    • 0029304501 scopus 로고
    • Ultra-low threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation
    • YANG, G.M., MACDOUGAL, M.H., and DAPKUS, P.D.: 'Ultra-low threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation'. Electron. Lett., 1995, 31, pp. 886-888
    • (1995) Electron. Lett. , vol.31 , pp. 886-888
    • Yang, G.M.1    Macdougal, M.H.2    Dapkus, P.D.3
  • 2
    • 0030213607 scopus 로고    scopus 로고
    • Sub-40μA continuous-wave lasing in an oxidised vertical-cavity surface-emitting laser with dielectric mirrors
    • HUFFAKER, D.L., GRAHAM, L.A., DENG, H., DEPPE, D.G., KUMAR, , and ROGERS, T.J.: 'Sub-40μA continuous-wave lasing in an oxidised vertical-cavity surface-emitting laser with dielectric mirrors', IEEE Photonics. Technol. Lett.. 1996, 8, pp. 974-976
    • (1996) IEEE Photonics. Technol. Lett.. , vol.8 , pp. 974-976
    • Huffaker, D.L.1    Graham, L.A.2    Deng, H.3    Deppe, D.G.4    Kumar5    Rogers, T.J.6
  • 3
    • 0001421084 scopus 로고
    • AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy
    • WANG, C.A., WALPOLE, J.N., MISSAGGIA, E.J., DONNELLY, J.P., and CHOI, H.K.: 'AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy', Appl. Phys. Lett., 1991, 58, pp. 2208-2210
    • (1991) Appl. Phys. Lett. , vol.58 , pp. 2208-2210
    • Wang, C.A.1    Walpole, J.N.2    Missaggia, E.J.3    Donnelly, J.P.4    Choi, H.K.5
  • 4
    • 0026155682 scopus 로고
    • Dark-line-resistant diode laser at 0.8μm comprising InAlGaAs strained quantum well
    • WATERS, R.G., DALBY, R.J., BAUMANN, J.A., and SHEPARD, A.H.: 'Dark-line-resistant diode laser at 0.8μm comprising InAlGaAs strained quantum well', IEEE Photonics Technol. Lett., 1991, 3, pp. 409-411
    • (1991) IEEE Photonics Technol. Lett. , vol.3 , pp. 409-411
    • Waters, R.G.1    Dalby, R.J.2    Baumann, J.A.3    Shepard, A.H.4
  • 5
    • 0031188715 scopus 로고    scopus 로고
    • Low-threshold 840nm laterally oxidised vertical-cavity lasers using AlInGaAs-AlGaAs strained active layers
    • KO, J., HEGBLOM, E.R., AKULOVA, Y., THIBEAULT, B.J., and COLDREN, L.A.: 'Low-threshold 840nm laterally oxidised vertical-cavity lasers using AlInGaAs-AlGaAs strained active layers', Photonics Technol. Lett., 1997, 9, pp. 863-865
    • (1997) Photonics Technol. Lett. , vol.9 , pp. 863-865
    • Ko, J.1    Hegblom, E.R.2    Akulova, Y.3    Thibeault, B.J.4    Coldren, L.A.5
  • 6
    • 0031109215 scopus 로고    scopus 로고
    • Scattering losses from dielectric apertures in vertical cavity lasers
    • HEGBLOM, E.R., BABIC, D.I., THIBEAULT, B.J., and COLDREN, L.A.: 'Scattering losses from dielectric apertures in vertical cavity lasers', JSTQE, 1997, 3, (2)
    • (1997) JSTQE , vol.3 , Issue.2
    • Hegblom, E.R.1    Babic, D.I.2    Thibeault, B.J.3    Coldren, L.A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.