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Volumn 33, Issue 18, 1997, Pages 1550-1551
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AlInGaAs/AlGaAs strained-layer 850 nm vertical-cavity lasers with very low thresholds
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Author keywords
Semiconductor junction lasers; Vertical cavity surface emitting lasers
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Indexed keywords
CURRENT DENSITY;
CURRENT VOLTAGE CHARACTERISTICS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE TESTING;
SEMICONDUCTOR QUANTUM WELLS;
THERMAL EFFECTS;
VERTICAL CAVITY SURFACE EMITTING LASERS;
SEMICONDUCTOR LASERS;
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EID: 0031207943
PISSN: 00135194
EISSN: None
Source Type: Journal
DOI: 10.1049/el:19971037 Document Type: Article |
Times cited : (16)
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References (6)
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