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Volumn 24, Issue 18, 2005, Pages 3066-3073

Synthesis and characterisation of Hf(thd)2X2 derivatives [X = N(SiMe3)2, OSiMe3 and OSi tBuMe2] as precursors for MOCVD of hafnium silicate films

Author keywords

Diketonate; Hafnium; MOCVD; Silicate; Silylamide; Silyloxide; Structure

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; HAFNIUM COMPOUNDS; SAPPHIRE; SINGLE CRYSTALS; VOLATILE ORGANIC COMPOUNDS; X RAY DIFFRACTION;

EID: 28444484927     PISSN: 02775387     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.poly.2005.06.036     Document Type: Article
Times cited : (19)

References (35)
  • 17
  • 23
    • 85169561205 scopus 로고    scopus 로고
    • Patent 2002, US 6472337, EP 1308419 (A1).
    • W.W. Zhuang, D.R. Evans, Patent 2002, US 6472337, EP 1308419 (A1).
    • Zhuang, W.W.1    Evans, D.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.