Effect of Nitrogen on the Band Structure and Material Gain of In yGa1-yAs1-xNx-GaAs Quantum Wells

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 9, Issue 3, 2003, Pages 716-722

  Ulloa, Jose María ^a   Sánchez Rojas, José Luis ^a   Hierro, Adrian ^a   Tijero, J M G ^a   Tournié, Eric ^b,c  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b CRHEA CNRS   (France)

^c UNIV MONTPELLIER   (France)

Author keywords

Band structure engineering; InGaAsN; Material gain; Quantum well (QW) laser diode

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION; ELECTRON TRANSITIONS; ENERGY GAP; HAMILTONIANS; LIGHT EMISSION; NITROGEN; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

CONDUCTION SUBBANDS; ELECTRON TRANSITION ENERGIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0348167492     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2003.818860     Document Type: Conference Paper

References (29)

1. M. Kondow, K. Uomi, A. Niwa, T. Kitaiani, S. Watahiki, and Y. Yazawa, "GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance," Jpn. J. Appl. Phys., vol. 35, pp. 1273-1275, 1996.
2. W. Shan, W. Walukiewicz, J. W. Ager, III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, "Band anticrossing in GaInNA's alloys," Phys. Rev. Lett., vol. 82, pp. 1221-122, 1999.
3. T. Kitatani, M. Kondow, and T. Tanaka, "High quality GaInNA's active layers for 1.3 μm lasers," Proc. SPIE, vol. 4287, pp. 154-161, 2001.
4. 0 long-wavelength InGaAsN quantum-well lasers grown by GSMBE using a solid arsenic source," IEEE Photon. Technol. Lett., vol. 14, pp. 597-599, May 2002.
5. M. O. Fischer, M. Reinhardt, and A. Forchel, "Room-temperature operation of GaInAsN-GaAs laser diodes in the 1.5 μm range," IEEE J. Select. Topics Quantum Electron., vol. 7, pp. 149-151, Mar.-Apr. 2001.
6. K. D. Choquette, J, F. Klem, A. J. Fischer, O. Blum, A. A. Allerman, I. J. Fritz, S. R. Kurtz, W. G. Breiland, R. Sieg, K. M. Geib, J. W. Scott, and R. L. Naone, "Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm," Electron. Lett., vol. 36, pp. 1388-1390, Aug. 2000.
7. C. Ellmers, F. Höhnsdorf, J. Koch, C. Agert, S. Leu, D. Karaiskaj, M. Hofmann, W. Stolz, and W. W. Rühle, "Ultrafast (GaIn)(NA's)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime," Appl. Phys. Lett., vol. 74, pp. 2271-2273, 1999.
8. A. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, C. Agert, S. Leu, M. Hofmann, W. Stolz, and W. W. Rühle, "(GaIn)(NA's)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range," Appl. Phys. Lett., vol. 76, pp. 271-272, 2000.
9. K. Kim and A. Zunger, "Spatial correlations in GaInAsN alloys and their effects on band-gap enhancement and electron localization," Phys. Rev. Lett., vol. 86, pp. 2609-2612, 2001.
10. 1-x and related alloys," Solid State Commun., vol. 112, pp. 443-447, 1999.
11. J. Hader, S. W. Koch, J. V. Moloney, and E. P. O'Reilly, "Gain in 1.3 μm materials: InGaNA's and InGaPA's semiconductor quantum-well lasers," Appl. Phys. Lett., vol. 77, pp. 630-632, 2000.
12. _, "Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers," Appl. Phys. Lett., vol. 76, pp. 3685-3687, 2000.
13. M. Hofmann, A. Wagner, C. Ellmers, C. Schlichenmeier, S. Schäfer, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader. J. V. Moloney, E. P. O'Reilly, B. Borchet, A. Y.A. Yu. Egorov, and H. Riechen, "Gain spectra of (GaIn)(NA's) laser diodes for the 1.3-μm-wavelength regime," Appl. Phys. Lett., vol. 78, pp. 3009-3011, 2001.
14. S. Tomic and E. P. O'Reilly, "Gain characteristics of ideal dilute nitride quantum well lasers," Physica E, vol. 13, pp. 1102-1105, 2002.
15. W. W. Chow, E. D. Jones, N. A. Modine, A. A. Allerman, and S. R. Kurtz, "Laser gain and threshold properties in compressive-strained and lattice matched GaInNAs/GaAs quantum wells," Appl. Phys. Lett., vol. 75, pp. 2891-2893, 1999.
16. W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. Geisz, D. Friedman, J. Olson. and S. R. Kurtz, "Effect of nitrogen on the band structure of GaInNA's alloys," J. Appl. Phys., vol. 86, pp. 2349-2351, 1999.
17. C. Skierbiszewski, P. Perlin, P. Wisniewski, T. Suski, W. Waluliewicz, W. Shan, J. Ager, E. Haller, J. Geisz, D. Friedman, J. Olson, and S. R. Kurtz, "Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys," Phys. Stat. Solidi B, vol. 216, pp. 135-139, 1999.
18. K. Uesugi, I. Suemune, T. Hasegawa, T. Akutagawa, and T. Nakamura, "Temperature dependence of band gap energies of GaAsN alloys," Appl. Phys. Lett., vol. 76, pp. 1285-1287, 2000.
19. 1-y/GaAs quantum wells, " Appl. Phys. Lett., vol. 78, pp. 1562-1564, 2001.
20. Z. Pan, L. H. Li, W. Zhang, Y. W. Lin, and R. H. Wu, "Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy," Appl. Phys. Lett., vol. 77, pp. 1280-1282, 2000.
21. M. Bissiri, V. Gaspari, A. Polimeni, G. B. H. Von Högersthal, M. Capizzi, and A. Frova, "High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells," Appl. Phys. Lett., vol. 79, pp. 2585-2587, 2001.
22. T. Hakkarainen, J. Toivonen, M. Sopanen, and H. Lipsanen, "GaInNA's quantum well structures for 1.55 μ m emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy," J. Cryst. Growth, vol. 234, pp. 631-636, 2002.
23. A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel, "Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells," Appl. Phys. Lett., vol. 77, pp. 2870-2872, 2000.
24. J. C. Yong, J. M. Rorison, and I. H. White, "Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers," Appl. Phys. Lett., vol. 79, pp. 1085-1087, 2001.
25. M. R. Hofmann, N. Gerhardt, A. M. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, W. Stolz, S., W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, E. P. O'Reilly, B. Borchert, A. Y. Egorov, H. Riechert, H. C. Schneider, and W. W. Chow, "Emission dynamics and optical gain of 1.3-μm (GaIn)(NA's)/GaAs lasers," IEEE J. Quantum. Electron., vol. 38, pp. 213-221, 2002.
26. J.-M. Chauveau, A. Trampert, M.-A. Pinault, E. Tournie, K. Du, and K. H. Ploog, "Correlation between structural and optical properties of GaInNA's quantum wells grown by MBE," J. Cryst. Growth, to be published.
27. R. H. Van, S. W. Corzine, L. A. Coldren, and I. Suemune, "Corrections to the expression for gain in GaAs," IEEE J. Quantum. Electron., vol. 26, pp. 213-216, Feb. 1990.
28. L. A. Coldren and S. W. Corzine, Diode Laser and Photonic Integrated Circuits. New York: Wiley, 1995, pp. 488-494.
29. 2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate," Appl. Phys. Lett., vol. 58, pp. 1704-1706, 1991.