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Volumn 92, Issue 10, 2002, Pages 6215-6218

A comparative study of spontaneous emission and carrier recombination processes in InGaAs quantum dots and GaInNAs quantum wells emitting near 1300 nm

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER RECOMBINATION; COMPARATIVE STUDIES; EMISSION EFFICIENCIES; EMISSION PROPERTIES; EXTERNAL QUANTUM EFFICIENCY; GAINNAS; INGAAS QUANTUM DOTS; LOW CURRENT DENSITY; MAXIMUM EFFICIENCY; NON-RADIATIVE RECOMBINATIONS; STATE FILLING EFFECT; TEMPERATURE RANGE;

EID: 0037113075     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1512683     Document Type: Article
Times cited : (21)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.