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Volumn 92, Issue 10, 2002, Pages 6215-6218
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A comparative study of spontaneous emission and carrier recombination processes in InGaAs quantum dots and GaInNAs quantum wells emitting near 1300 nm
a a a a a b |
Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER RECOMBINATION;
COMPARATIVE STUDIES;
EMISSION EFFICIENCIES;
EMISSION PROPERTIES;
EXTERNAL QUANTUM EFFICIENCY;
GAINNAS;
INGAAS QUANTUM DOTS;
LOW CURRENT DENSITY;
MAXIMUM EFFICIENCY;
NON-RADIATIVE RECOMBINATIONS;
STATE FILLING EFFECT;
TEMPERATURE RANGE;
GALLIUM NITRIDE;
LIGHT EMITTING DIODES;
SEMICONDUCTOR QUANTUM DOTS;
SEMICONDUCTOR QUANTUM WELLS;
SEMICONDUCTING INDIUM;
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EID: 0037113075
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1512683 Document Type: Article |
Times cited : (21)
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References (11)
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