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Volumn 85, Issue 1, 2004, Pages 40-42
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Dominant carrier recombination mechanisms in GaInNAs/GaAs quantum well light-emitting diodes
b
CRHEA CNRS
(France)
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
ELECTROLUMINESCENCE;
QUANTUM EFFICIENCY;
RAPID THERMAL ANNEALING;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR QUANTUM DOTS;
SEMICONDUCTOR QUANTUM WELLS;
BAND-TO-BAND TRANSITIONS;
CARRIER RECOMBINATION;
INJECTION CURRENT;
LOCALIZATION ENERGY;
LIGHT EMITTING DIODES;
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EID: 3242659221
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1769078 Document Type: Article |
Times cited : (7)
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References (12)
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