Effects of plasma treatments on structural and electrical properties of methyl-doped silicon oxide low dielectric constant film

Thin Solid Films

Volumn 496, Issue 2, 2006, Pages 402-411

  Leong, W Y ^a   Tsang, C F ^b   Li, H Y ^b   Bliznetsov, V ^b   Wong, L Y ^b   Li, W H ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Electrical performance; Low k dielectric film; Plasma treatment; Structural properties

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ETCHING; PERMITTIVITY; PHOTORESISTS; PLASMAS; SEMICONDUCTING SILICON; SURFACE ROUGHNESS;

ELECTRICAL PERFORMANCE; LOW K DIELECTRIC FILMS; PLASMA TREATMENT; STRUCTURAL PROPERTIES;

DIELECTRIC FILMS;

EID: 28044455906     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.283     Document Type: Article

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