Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from trimethylsilane

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 219-222

  Wang, M R ^a,b   Rusli, ^b   Yu, M B ^a   Babu, N ^a   Li, C Y ^a   Rakesh, K ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

3MS; Carbon doped silicon oxide low k thin film; Deposition rate; PECVD

Indexed keywords

CARBON-DOPED SILICON OXIDE LOW K THIN FILMS; DEPOSITION RATE; TRIMETHYLSILANE (3MS);

ELECTRODEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLARIZATION; REFRACTIVE INDEX; THERMODYNAMIC STABILITY;

DIELECTRIC FILMS;

EID: 4344615588     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.081     Document Type: Article

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