A micromachined microwave switch fabricated by the complementary metal oxide semiconductor post-process of etching silicon dioxide

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 9 A, 2005, Pages 6804-6809

  Dai, Ching Liang ^a   Peng, Hsuan Jung ^a   Liu, Mao Chen ^a   Wu, Chyan Chyi ^b   Hsu, Heng Ming ^a   Yang, Lung Jieh ^c  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c TAMKANG UNIVERSITY   (Taiwan)

Author keywords

CMOS; Microwave switch; Post process

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC FIELDS; ETCHING; INSERTION LOSSES; MICROMACHINING; SILICA;

MICROWAVE SWITCH; POST-PROCESS;

MICROWAVES;

EID: 27944465901     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.6804     Document Type: Article

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