SiGe technology requirements for millimeter-wave applications

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2004, Pages 79-83

  Wennekers, P ^a   Reuter, R ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; FREQUENCIES; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MICROWAVE CIRCUITS; PRODUCT DESIGN; SEMICONDUCTING SILICON COMPOUNDS;

LOW-COST CIRCUITS; MILLIMETER-WAVE APPLICATIONS; RF-CIRCUITS; ROOM TEMPERATURE;

MILLIMETER WAVES;

EID: 17044414543     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. MReisch, "High-Frequency Bipolar Transistors", Springer Series -Advanced Microelectronics, Berlin 2003, ISBN 3-540-67702-X
3. F.K.Chai et al.,"Outstanding Noise Characteristics of SiGe:C HBT Allow Flexibility in High-Frequency RF Designs", IEEE RF-IC Symposium Proc. 2003, pp. 151-154
4. B.Jagannathan et al. "Self-Aligned SiGe NPN Transistors With 285 GHz finax and 207 GHz ft in Manufacturable Technology", IEEE Electron Device Letters, Vol.23, No.5, pp. 258-260, (2002)
5. W. Heinrich, J. Gerdes, F. J. Schmueckle, C. Rheinfelder, and K. Strohm, " Coplanar Passive Elements on Si Substrate for Frequencies up to 110 GHz", IEEE MTT, Vol.46, No.5, pp.709-712, (1998)