180 GHz fT and fmax self-aligned SiGeC HBT using selective epitaxial growth of the base

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 299-302

  Chevalier, P ^a   Fellous, C ^a   Martinet, B ^a   Leverd, F ^a   Saguin, F ^a   Dutartre, D ^a   Chantre, A ^a  

^a STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SELECTIVE EPITAXIAL GROWTH; SELF-ALIGNED; SIGEC HBT;

EID: 84907709288     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256873     Document Type: Conference Paper

References (5)

1. J.-S. Rieh et al, "SiGe HBTs with Cut-off Frequency of 350GHz", 2002 International Electron Devices Meeting Technical Digest, San Francisco, USA (CA), December 8-11, 2002, pp. 771-774.
2. J. Böck et al, "Sub 5 ps SiGe Bipolar Technology", 2002 International Electron Devices Meeting Technical Digest, San Francisco, USA (CA), December 8-11, 2002, pp. 763-766.
3. K. Oda et al, "Self-Aligned Selective - Epitaxial -Growth Si1-x-yGexCy HBT Technology Featuring 170-GHz fmax", 2001 International Electron Devices Meeting Technical Digest, Washington, USA (DC), December 2-5, 2001, pp. 332-335.
4. H. J. Osten et al, "Impact of low carbon concentrations on the electrical properties of highly boron doped SiGe layers", Appl. Phys. Lett. 71 (11), September 15, 1997, pp. 1522-1524.
5. H. Schafer et al, "Selective Epitaxial Growth of SiGe:C for High Speed HBTs", First International SiGe Technology and Device Meeting, Nagoya, Japan, January 15-17, 2003, pp. 105-106.