Transit times of SiGe:C HBTs using nonselective base epitaxy

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1993-1999

  Zerounian, Nicolas ^a   Rodriguez, Manuel ^a   Enciso, Mauro ^a   Aniel, Frédéric ^a   Chevalier, Pascal ^b   Martinet, Bertrand ^b   Chantre, Alain ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b STMICROELECTRONICS   (France)

Author keywords

300 77 K; Charging time; Collector transit time; Cryogenic; fMAX; fT; Heterojunction bipolar transistors; Integrated bipolar transistors; Parameter extraction; S parameters; SiGe; Small signal parameters; Transit time

Indexed keywords

ANNEALING; CAPACITANCE; CMOS INTEGRATED CIRCUITS; CRYOGENICS; DIGITAL INTEGRATED CIRCUITS; DOPING (ADDITIVES); ELECTRIC RESISTANCE; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; RADAR; RAPID THERMAL ANNEALING; SCATTERING PARAMETERS; SILICON COMPOUNDS; WIRELESS TELECOMMUNICATION SYSTEMS;

300-77 K; CHARGING TIME; COLLECTOR TRANSIT TIME; INTEGRATED BIPOLAR TRANSISTORS; PARAMETER EXTRACTION; SIGE; SMALL-SIGNAL PARAMETERS; TRANSIT TIME;

TRANSIT TIME DEVICES;

EID: 3142708241     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.046     Document Type: Conference Paper

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