Effect of a magnetic field on thermally activated tunneling ionization of impurity centers in semiconductors

JETP Letters

Volumn 68, Issue 10, 1998, Pages 804-809

  Perel', V I ^a   Yassievich, I N ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012401465     PISSN: 00213640     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.567949     Document Type: Article

References (6)

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3. V. N. Abakumov, V. I. Perel', and I. N. Yassievich, in Nonradiative Recombination in Semiconductors, Vol. 33 of Modern Problems in Condensed Matter Sciences, edited by V. M. Agranovich and A. A. Maradudin, Amsterdam, North-Holland, 1991.
4. S. D. Ganichev, I. N. Yassievich, and W. Prettl, Fiz. Tverd. Tela (Leningrad) 39, 1905 (1997) [Sov. Phys. Solid State 39, 1703 (1997)].
5. L. P. Kotova, A. M. Perelomov, and V. S. Popov, Zh. Éksp. Teor. Fiz. 54, 1151 (1968) [Sov. Phys. JETP 27, 616 (1968)].
6. V. S. Popov and A. V. Sergeev, Zh. Éksp. Teor. Fiz. 113, 2047 (1998) [JETP 86, 1122 (1998)].