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Volumn 69, Issue , 1999, Pages 539-544
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Identification of process induced defects in silicon power devices
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL BONDS;
CRYSTAL DEFECTS;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
DIFFUSION IN SOLIDS;
ENERGY GAP;
HEAT TREATMENT;
HOLE TRAPS;
IMPURITIES;
IONIZATION OF SOLIDS;
SEMICONDUCTOR JUNCTIONS;
AUGER RECOMBINATION;
BONDED BOUNDARIES;
HOLE CAPTURE CROSS SECTION;
PHOTOTHERMAL IONIZATION SPECTROSCOPY;
POTENTIAL BARRIER FORMATION;
SILICON WAFERS;
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EID: 0032685543
PISSN: 10120394
EISSN: None
Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/ssp.69-70.539 Document Type: Article |
Times cited : (7)
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References (19)
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