A novel type of power picosecond semiconductor switches based on tunneling-assisted impact ionization fronts

IEEE Conference Record of Power Modulator Symposium

Volumn , Issue , 2002, Pages 445-448

  Rodin, P ^a   Ebert, U ^b   Hundsdorfer, W ^b   Grekhov, I ^c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b Centruum voor Wiskunde Informatica ^*  (Netherlands)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLITUDE MODULATION; ELECTRON TUNNELING; IONIZATION; POWER ELECTRONICS; PULSE GENERATORS; TRANSIENTS; VOLTAGE CONTROL; VOLTAGE MEASUREMENT;

POWER PICOSECOND SWITCHES; SWITCHING TRANSIENTS; VOLTAGE PULSES;

SEMICONDUCTOR SWITCHES;

EID: 0036999013     PISSN: 10768467     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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