GaN heteroepitaxial growth on LiNbO 3(0001) step substrates with AlN buffer layers

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 13, 2005, Pages

  Tsuchiya, Yousuke ^a   Kobayashi, Atsushi ^b   Ohta, Jitsuo ^b,c   Fujioka, Hiroshi ^b,c   Oshima, Masaharu ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; HETEROINTERFACES; LAYER THICKNESS; ROCKING CURVES;

ALUMINUM NITRIDE; GALLIUM NITRIDE; INTERFACES (MATERIALS); LITHIUM COMPOUNDS; LOW TEMPERATURE EFFECTS; PULSED LASER DEPOSITION; SUBSTRATES;

EPITAXIAL GROWTH;

EID: 27744437887     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200521226     Document Type: Article

References (27)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Jpn. J. Appl. Phys. 36, L1568 (1997).
2. I. Akaski and H. Amano, Jpn. J. Appl. Phys. 36, 5393 (1996).
3. S. Ito, H. Fujioka, J. Ohta, H. Takahashi, and M. Oshima, Thin Solid Films 435, 215 (2003).
4. J. Ohta, H. Fujioka, H. Takahashi, and M. Oshima, Appl. Surf. Sci. 197/198, 486 (2002).
5. H. Takahashi, J. Ohta, H. Fujioka, M. Oshima, and M. Kimura, J. Cryst. Growth 237-239, 1158 (2002).
6. J. Ohta, H. Fujioka, S. Ito, and M. Oshima, Thin Solid Films 435, 218 (2003).
7. S. Ito, J. Ohta, H. Fujioka, and M. Oshima, Appl. Surf. Sci. 197/198, 384 (2002).
8. J. Ohta, H. Fujioka, H. Takahashi, and M. Oshima, phys. stat. sol. (a) 188, 497 (2001).
9. H. Takahashi, J. Ohta, H. Fujioka, and M. Oshima, Thin Solid Films 407, 114 (2002).
10. Q. Zhang, S. F. Yoon, S. Zhgoon, B. Gan, J. Ahn, and A. Revkov Rusli, Thin Solid Films 360, 274 (2000).
11. K. Matsubara, P. Fons, A. Yamada, M. Watanabe, and S. Niki, Thin Solid Films 347, 238 (1999).
12. T. A. Rost, H. Lin, and T. A. Rabson, J. Appl. Phys. Lett. 59, 3654 (1991).
13. K. Kim, IEEE Electron Device Lett. 19, 204 (1998).
14. G. H. Lee, Opt. Exp. 10, 556 (2002).
15. P. J. Hansen, Y. Terao, R. A. York, U. K. Mishra. and J. S. Speck, J. Vac. Sci. Technol. B 23, 162 (2005).
16. W. A. Doolittle, G. Namkoong, A. Carver, W. Henderson, D. Jundt, and A. S. Brown, Mater. Res. Soc. Symp. Proc. 743, 9 (2003).
17. S. Ito, H. Fujioka, H. Takahashi, and M. Oshima, phys. stat. sol. (c) 0(1), 192 (2002).
18. J. Ohta, H. Fujioka, M. Furusawa, A. Sasaki, M. Yoshimoto, H. Koinuma, M. Sumiya, and M. Oshima, J. Cryst. Growth 237-239, 1153 (2002).
19. J. Ohta, H. Fujioka, H. Takahashi, and M. Oshima, Appl. Surf. Sci. 190, 352 (2002).
20. J. Ohta, H. Fujioka, H. Takahashi, M. Sumiya, and M. Oshima, J. Cryst. Growth 233, 779 (2002).
21. J. Ohta, H. Fujioka, and M. Oshima, Appl. Phys. Lett. 83, 3075 (2003).
22. A. Kobayashi, H. Fujioka, J. Ohta, and M. Oshima, Jpn. J. Appl. Phys. 43, L53 (2004).
23. J. Ohta, H. Fujioka, and M. Oshima, Appl. Phys. Lett. 83, 3060 (2003).
24. J. Ohta, H. Fujioka, S. Ito, and M. Oshima, Appl. Phys. Lett. 81, 2373 (2002).
25. Y. Tsuchiya, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima, submitted to Solid State Commun.
26. L. G. Parratt, Phys. Rev. 95, 359 (1954).
27. L. Nevot and P. Croce, Rev. Phys. Appl. 15, 761 (1980).