High-breakdown-voltage Ga0.51In0.49P channel MESFET's grown by GSMBE

IEEE Electron Device Letters

Volumn 17, Issue 9, 1996, Pages 452-454

  Lin, Yo Sheng ^a   Lu, Shey Shi ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC FREQUENCY MEASUREMENT; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE;

CHANNEL MATERIALS; GAS SOURCE MOLECULAR BEAM EPITAXY; GATE LENGTH DEVICES; MAXIMUM OSCILLATION FREQUENCY;

MESFET DEVICES;

EID: 0030241695     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.536290     Document Type: Article

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