Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2555-2557

  Chen, Yen Wei ^a   Hsu, Wei Chou ^a   Hsu, Rong Tay ^a   Wu, Yue Huei ^a   Chen, Yeong Jia ^a   Lin, Yu Shyan ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ENERGY GAP; FERMI LEVEL; FREQUENCIES; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLITHOGRAPHY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRUCTURE (COMPOSITION);

ELECTRON CHARGES; MICROWAVE CHARACTERISTICS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0942300077     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1625954     Document Type: Article

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