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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 A, 2004, Pages 3285-3288

Characteristics of spike-free single and double heterostructure-emitter bipolar transistors

(6) Lin, Yu Shyan a Hsu, Wei Chou b Jong, Fuh Cheng c Chiou, Yu Zung c Chen, Yeong Jia b Tang, Jing Jou c

a NATIONAL DONG HWA UNIVERSITY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

c SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

Emitter edge thinning; HBT; HEBT; MOCVD; Potential spike

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION; POISSON EQUATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

EMITTER EDGE THINNING; GUMMEL PLOTS; HETEROSTRUCTURE-EMITTER BIPOLAR TRANSISTORS (HEBT); POTENTIAL SPIKES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 4344619874 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.3285 Document Type: Article

Times cited : (7)

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