Integration of GaInP/GaAs heterojunction bipolar transistors and high electron mobility transistors

IEEE Electron Device Letters

Volumn 17, Issue 7, 1996, Pages 363-365

  Yang, Y F ^a,b   Hsu, C C ^c   Yang, E S ^a,b  

^a IEEE

^b Department of Earth and Environmental Sciences   (United States)

^c CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GAIN MEASUREMENT; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVE DEVICES; OSCILLATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

CURRENT GAIN; GALLIUM INDIUM PHOSPHIDE GALLIUM ARSENIDE; MAXIMUM OSCILLATION FREQUENCY;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030182122     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.506368     Document Type: Article

References (11)

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