High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT

IEEE Transactions on Electron Devices

Volumn 49, Issue 2, 2002, Pages 221-225

  Chen, Yen Wei ^b   Hsu, Wei Chou ^a,b   Shieh, Her Ming ^c   Chen, Yeong Jia ^b   Lin, Yu Shyan ^b   Li, Yih Juan ^b   Wang, Tzong Bin ^b  

^a IEEE   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c KUNG SHAN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

High breakdown voltage; Metal organic chemical vapor deposition (MOCVD); Real space transfer (RST)

Indexed keywords

BROAD PLATEAU; CIRCUIT COMPLEXITY; CURRENT VALLEY; GATE TO DRAIN BREAKDOWN VOLTAGE; NEGATIVE DIFFERENTIAL RESISTANCE; PEAK TO VALLEY RATIO; REAL SPACE TRANSFER; SUBSPACER LAYERS;

ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRON TUNNELING; ENERGY GAP; HOT CARRIERS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036475874     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.981210     Document Type: Article

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