AlGaAs/InGaAs heterostructure doped-channel FET's exhibiting good electrical performance at high temperatures

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2210-2215

  Chiu, Hsien Chin ^b   Yang, Shih Cheng ^a,b   Chan, Yi Jen ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Doped channel; Power performance; Temperature

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; POWER ADDED EFFICIENCY; POWER GAIN;

HETEROJUNCTIONS; HIGH TEMPERATURE PROPERTIES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 0035471291     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954456     Document Type: Article

References (11)

1. Thermal simulations of III/V HEMTS
2. TO of GaAs MESFET devices
3. Enhanced GaAs MESFET CAD model for a wide range of temperatures
4. Temperature dependent study of the microwave performance of 0.25-μ m gate GaAs MESFET's and GaAs pseudomorphic HEMT's
5. High-temperature electrical characteristics of GaAs MESFET's (25-400°C)
6. Temperature dependent of high-frequency performance of AlGaAs/InGaAs pseudomorphic HEMT's
7. 0.8As heterostructures
8. Microwave power performance comparison between single and dual doped-channel design in AlGaAs/InGaAs HFET's
9. An investigation of I-AlGaAs/n-GaAs doped-channel MIS-like's (DMT's)-properties and performance potentialities
10. 2/V-s in selectively doped GaAs/N-AlGaAs heterostructures grown by MBE
11. Enhancement of high-temperature high-frequency performance of GaAs-based FET's by the high-temperature electronic technique